Friday, July 30, 2010

Paper watch: Nature Photonics

The latest issue of Nature Photonics is out and focuses on silicon photonics. Choice articles:
  • Towards fabless silicon photonics.
  • An interview with Intel's Mario Paniccia on integrating silicon photonics.
  • Monolithically integrated solid-state Terhahertz transceivers. Abstract:
    "Recent advances in microfabricated terahertz quantum cascade lasers have achieved coherent power and frequency performance previously possible only with much larger gas- or vacuum-tube sources. A significant advantage offered by terahertz quantum cascade lasers lies in the potential to integrate them with other components on the same chip. Such terahertz photonic integrated circuits would help close the terahertz technology gap between microwave electronics and infrared photonics. Here, we describe the first successful monolithic integration of a terahertz quantum cascade laser and diode mixer to form a simple but generically useful terahertz photonic integrated circuit—a microelectronic terahertz transceiver. We show that this terahertz photonic integrated circuit performs all the basic functions (for example, transmission of a coherent carrier, heterodyne reception of an external signal, frequency locking and tuning) of discrete-component terahertz photonic systems, but at a small fraction of the size and in a robust platform scalable to semiconductor fabrication production."
  • High-performance Ge-on-Si photodetectors. Abstract:
    "The past decade has seen rapid progress in research into high-performance Ge-on-Si photodetectors. Owing to their excellent optoelectronic properties, which include high responsivity from visible to near-infrared wavelengths, high bandwidths and compatibility with silicon complementary metal–oxide–semiconductor circuits, these devices can be monolithically integrated with silicon-based read-out circuits for applications such as high-performance photonic data links and infrared imaging at low cost and low power consumption. This Review summarizes the major developments in Ge-on-Si photodetectors, including epitaxial growth and strain engineering, free-space and waveguide-integrated devices, as well as recent progress in Ge-on-Si avalanche photodetectors."

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