Saturday, July 31, 2010

A couple of items from TSMC's Q2 earnings call

From seeking alpha.
[...]
For CMOS image sensors, we use 65-nanometer and backside illumination to achieve the best quantum efficiency.
[...]
For MEMS, we use 0.18-micron to compete 3D CMOS MEMS integration.
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We have also experienced, accelerated our sourcing by IBMs and growing presence of fabless customers in specialty technologies, such as CMOS image sensors, embedded memories, high voltage, automotive and power.
[...]
Through the recent technology license and the investment agreement with Stion Corporation, we are transferring and developing together high conversion efficiency CIGS thin-film technology with a very low intrinsic cost structure, based on which both companies will aggressively build our manufacturing capacity to scale in the near future.
We strongly believe that CIGS technology will provide a long-term competitive solution to this high growth market. Earlier, strategic investment in Motech, which is a major crystalline silicon solar photovoltaic manufacturer has accelerated our learning curve and their solar cell support will enable our early entry in the solar market.

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