Thursday, January 21, 2010

IEEEXplore watch: Quantified Temperature Effect in a CMOS Image Sensor

Another paper from the February 2010 issue of IEEE TED on image sensors: "Quantified Temperature Effect in a CMOS Image Sensor".
To quantify the influence of temperature, the maximum depth of an affected region was defined as DAR. The experimental results revealed that the DAR index increased with either an increase in power consumption or a space reduction between the resistor and the pixel array. The DAR index not only characterized affected regions in the experiment but also provided a valuable reference regarding temperature protection for future imager designs.

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