Tuesday, December 8, 2009

Summary of IEDM course on scaling challenges

From Semiconductor International: "Silicon May Prevail Despite Power Fears".
Speakers at an IEDM short course on scaling challenges said planar devices made in bulk silicon CMOS are likely to continue to be the basic technology platform for the next decade, despite concerns about power consumption. While III-V and germanium channels offer high mobilities and lower operating voltages, the challenges of cost, manufacturing complexity, and finding a workable gate dielectric may prevent adoption. Scott Thompson, organizer of the short course, said one exception may be Intel, which he said is seriously considering a tri-gate transistor for the outer nodes.

Related: "HKMG: Gate-First vs Gate-Last Options".

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