Tuesday, November 24, 2009

More on FinFETs

Also via IEEE Spectrum: "First Gallium-Based FinFETs":

[...]

At next month’s IEEE International Electron Devices Meeting, Ye’s group will report the creation of InGaAs FinFETs. The research shows that these FinFETs—with fins ranging from 100 nanometers to 200 nm in length—leaked less current and reduced other short-channel effects compared with ordinary InGaAs devices.

That’s useful, because short-channel effects such as current leakage are even more pronounced for III-V semiconductors like gallium arsenide (so called because they’re made from elements in the third and fifth columns of the right side of the periodic table).

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