Sunday, June 14, 2009

Semiconductor Technologies

"Graphene May Have Advantages Over Copper For Future IC Interconnects":

Beyond resistivity improvement, graphene interconnects would offer higher electron mobility, better thermal conductivity, higher mechanical strength and reduced capacitance coupling between adjacent wires.


Because graphene can be patterned using conventional microelectronics processes, the transition from copper could be made without integrating a new manufacturing technique into circuit fabrication.


Scientists at the Forschungszentrum Dresden-Rossendorf (FZD) research center have been able to produce superconducting germanium for the first time.


At Semiconductor International: "IMEC Tips 10 nm Options at Tech Forum". One line that links nicely with the last paragraphs of the previous article:

Heyns said that recent studies at IMEC revealed that germanium oxide (GeO2), when grown under the right conditions on silicon, is actually a better insulator than the SiO2.

And the last paragraph, linking to the first article above:

Graphene, which is a zero-bandgap semiconductor with very high carrier mobility, is showing great promise, particularly for interconnects. While the current capacity for copper is ~106 A/cm2, it is ~109 A/cm2 for carbon nanotubes.

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