Sunday, June 14, 2009

Semiconductor Technologies

"Graphene May Have Advantages Over Copper For Future IC Interconnects":

Beyond resistivity improvement, graphene interconnects would offer higher electron mobility, better thermal conductivity, higher mechanical strength and reduced capacitance coupling between adjacent wires.

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Because graphene can be patterned using conventional microelectronics processes, the transition from copper could be made without integrating a new manufacturing technique into circuit fabrication.

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Scientists at the Forschungszentrum Dresden-Rossendorf (FZD) research center have been able to produce superconducting germanium for the first time.

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At Semiconductor International: "IMEC Tips 10 nm Options at Tech Forum". One line that links nicely with the last paragraphs of the previous article:

Heyns said that recent studies at IMEC revealed that germanium oxide (GeO2), when grown under the right conditions on silicon, is actually a better insulator than the SiO2.

And the last paragraph, linking to the first article above:

Graphene, which is a zero-bandgap semiconductor with very high carrier mobility, is showing great promise, particularly for interconnects. While the current capacity for copper is ~106 A/cm2, it is ~109 A/cm2 for carbon nanotubes.

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